Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region
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چکیده
منابع مشابه
Room-temperature short-wavelength infrared Si photodetector
The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-standing scientific challenge for many decades since most photons with sub-band gap energies pass through Si unabsorbed. This fundamental shortcoming, however, can be overcome by introducing n...
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Infrared photo detectors have vast and promising applications in military,industrial and other fields. In this paper, we present a method for improving theperformance of an infrared photodetector based on an InSb substance. To achieve goodperformance at high temperatures, thermal noise and intrusive currents should bereduced. For this purpose, a five-layer hetero structu...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2018
ISSN: 1094-4087
DOI: 10.1364/oe.26.007227